Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon

Bender, HugoHugoBenderJin, S.S.JinWu, Ming FangMing FangWuVantomme, AndreAndreVantommePattyn, HugoHugoPattynLangouche, H.H.Langouche2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2389Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) siliconProceedings paper