Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

Amat, EsteveEsteveAmatRodriguez, RosanaRosanaRodriguezBargallo Gonzalez, MireiaMireiaBargallo GonzalezMartin Martinez, JavierJavierMartin MartinezNafria, MontseMontseNafriaAymerich, XavierXavierAymerichMachkaoutsan, VladimirVladimirMachkaoutsanBauer, M.M.BauerVerheyen,Verheyen2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16652Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drainProceedings paper