Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitch

Zhang, BoyaoBoyaoZhangChew, Soon AikSoon AikChewStucchi, MicheleMicheleStucchiDewilde, SvenSvenDewildeIacovo, SerenaSerenaIacovoWitters, LiesbethLiesbethWittersWebers, TomasTomasWebersVan Sever, KoenKoenVan SeverDe Vos, JoeriJoeriDe VosMiller, AndyAndyMillerBeyer, GeraldGeraldBeyerBeyne, EricEricBeyne2025-04-172024-12-072025-04-172024979-8-3503-7599-20569-5503WOS:001260983500051https://imec-publications.be/handle/20.500.12860/44946Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitchProceedings paper10.1109/ECTC51529.2024.00058979-8-3503-7598-5WOS:001260983500051