Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

Hayama, K.K.HayamaTakakura, K.K.TakakuraYoneoka, M.M.YoneokaOhyama, H.H.OhyamaRafi, J.M.J.M.RafiMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12261Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiationJournal article