Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

Goux, LudovicLudovicGouxKim, WoosikWoosikKimOpsomer, KarlKarlOpsomerBelmonte, AttilioAttilioBelmonteKar, Gouri SankarGouri SankarKarDe Stefano, FrancescaFrancescaDe StefanoAfanasiev, ValeriValeriAfanasievCelano, UmbertoUmbertoCelanoHoussa, MichelMichelHoussaDevulder, WouterWouterDevulderDetavernier, C.C.DetavernierMuller, RobertRobertMullerVandervorst, WilfriedWilfriedVandervorstJurczak, GosiaGosiaJurczak2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22417Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cellsProceedings paperhttp://ecst.ecsdl.org/content/58/7/175.abstract