Analog operation of uniaxially and biaxially strained FD SOI nMOSFETs at cryogenic temperatures

de Souza, M.M.de SouzaMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeysPavanello, M.A.M.A.Pavanello2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13620Analog operation of uniaxially and biaxially strained FD SOI nMOSFETs at cryogenic temperaturesProceedings paper