Ramesh, SanthoshSanthoshRameshTuomiranta, ArttuArttuTuomirantaYordanov, Georgi H.Georgi H.YordanovBadran, HusseinHusseinBadranHajjiah, AliAliHajjiahVermang, BartBartVermangPoortmans, JefJefPoortmans2025-02-102025-02-1020252045-2322WOS:001391785200033https://imec-publications.be/handle/20.500.12860/45197This study presents a comprehensive evaluation of Copper Indium Gallium Selenide (CIGS) solar technology, benchmarked against crystalline silicon (c-Si) PERC PV technology. Utilizing a newly developed energy yield model, we analyzed the performance of CIGS in various environmental scenarios, emphasizing its behavior in low-light conditions and under different temperature regimes. The model demonstrated high accuracy with improved error metrics of normalized mean bias error (nMBE) ~ 1% and normalized root mean square error (nRMSE) of  ~ 8%–20% in simulating rack mounted setup and integrated PV systems. Key findings reveal that the CIGS technology, while slightly underperforming in integrated, low-irradiance setups, shows comparable or superior performance to c-Si PERC technology in high-irradiance and high-temperature conditions. A significant focus of the study was on the low-light performance of CIGS, where it exhibited notable voltage losses. Our research highlights the importance of reducing the diode ideality factor for enhancing CIGS power conversion efficiency, particularly In low-light conditions. These insights provide a pathway for future research and technological improvements, emphasizing defect engineering, passivation strategies to advance the understanding and application of the CIGS technology.Journal article10.1038/s41598-024-78862-wWOS:001391785200033TEMPERATUREIRRADIANCEMEDLINE:39762265