Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS

Merckling, ClementClementMercklingPenaud, JulienJulienPenaudKohen, DavidDavidKohenBellenger, FlorenceFlorenceBellengerAlian, AliRezaAliRezaAlianBrammertz, GuyGuyBrammertzEl-Kazzi, MarioMarioEl-KazziHoussa, MichelMichelHoussaDekoster, JohanJohanDekosterCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-10-182021-10-1820090167-9317https://imec-publications.be/handle/20.500.12860/15854Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOSJournal articlehttp://www.sciencedirect.com.gate6.inist.fr/science?_ob=ArticleURL&_udi=B6V0W-4VTVPRR-2&_user=4013381&_rdoc=1&_fmt=&_orig=search