Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

Hu, JieJieHuStoffels, SteveSteveStoffelsLenci, SilviaSilviaLenciRonchi, NicoloNicoloRonchiDe Jaeger, BriceBriceDe JaegerYou, ShuzhenShuzhenYouBakeroot, BenoitBenoitBakerootGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26749Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge terminationMeeting abstracthttp://ieeexplore.ieee.org/document/7528735/?arnumber=7528735