Using water structuring by ions to address pattern loading in wet HF-based oxide recess etch

Vereecke, GuyGuyVereeckeDe Coster, HanneHanneDe CosterDochain, DenisDenisDochainNurekeyeva, KunsuluKunsuluNurekeyevaConlan, ShonaShonaConlanNsimba, AnthonyAnthonyNsimbaWostyn, KurtKurtWostynAltamirano Sanchez, EfrainEfrainAltamirano Sanchez2023-10-132023-08-102023-10-1320230167-9317WOS:001037175400001https://imec-publications.be/handle/20.500.12860/42310Using water structuring by ions to address pattern loading in wet HF-based oxide recess etchJournal article10.1016/j.mee.2023.112058WOS:001037175400001