Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass

Kikuchi, YoshiakiYoshiakiKikuchiChiarella, ThomasThomasChiarellaDe Roest, DavidDavidDe RoestBlanquart, TimotheeTimotheeBlanquartDe Keersgieter, AnAnDe KeersgieterKenis, KarineKarineKenisPeter, AntonyAntonyPeterOng, PatrickPatrickOngVan Besien, ElsElsVan BesienTao, ZhengZhengTaoKim, Min-SooMin-SooKimKubicek, StefanStefanKubicekChew, Soon AikSoon AikChewSchram, TomTomSchramDemuynck, StevenStevenDemuynckMocuta, AndaAndaMocutaMocuta, DanDanMocutaHoriguchi, NaotoNaotoHoriguchi2021-10-232021-10-2320160741-3106https://imec-publications.be/handle/20.500.12860/26829Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glassJournal articlehttp://ieeexplore.ieee.org/document/7508380/?arnumber=7508380