Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate

Tallarico, AndreaAndreaTallaricoPosthuma, NielsNielsPosthumaBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereFiegna, CCFiegnaSangiorgi, EESangiorgi2021-10-312021-10-312021https://imec-publications.be/handle/20.500.12860/37221Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type GateProceedings paper