Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs

Gupta, AmratanshAmratanshGuptaYu, HaoHaoYuYadav, SachinSachinYadavAlian, AliRezaAliRezaAlianPeralagu, UthayasankaranUthayasankaranPeralaguJang, E-SanE-SanJangKuo, Ying-ChunYing-ChunKuoCollaert, NadineNadineCollaertParvais, BertrandBertrandParvais2026-04-132026-04-132025979-8-3315-0478-61541-7026https://imec-publications.be/handle/20.500.12860/59067This work presents a study focused on current collapse (CC) in several RF GaN-on-Si HEMT architectures under ON-state stress and offers insights into the significantly high CC observed during ON-state stress. The ON-state stress is identified as a more detrimental stress state to device reliability compared to SemiON and OFF-state stress at the same VDS. This work explores the underlying physical mechanism of CC under the ON-state stress by a comprehensive comparison of various RF GaN-on-Si HEMT device architectures. We find that electric field engineering at the gate corner can significantly reduce CC under the ON-state stress.engPhysical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTsProceedings paper10.1109/IRPS48204.2025.10983392WOS:001546466200119