Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Hu, JieJieHuStoffels, SteveSteveStoffelsZhao, MingMingZhaoTallarico, Andrea NataleAndrea NataleTallaricoRossetto, IsabellaIsabellaRossettoMeneghini, MatteoMatteoMeneghiniKang, XuanwuXuanwuKangBakeroot, BenoitBenoitBakerootKaczer, BenBenKaczerDecoutere, StefaanStefaanDecoutereGroeseneken, GuidoGuidoGroeseneken2021-10-242021-10-2420170741-3106https://imec-publications.be/handle/20.500.12860/28542Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB testsJournal articlehttp://ieeexplore.ieee.org/document/7836313/