Ge epitaxial layer growth on Si in ultra narrow STI patterned structures

Loo, RogerRogerLooHikavyy, AndriyAndriyHikavyySun, JianwuJianwuSunBender, HugoHugoBenderThean, AaronAaronThean2021-10-222021-10-222015-05https://imec-publications.be/handle/20.500.12860/25573Ge epitaxial layer growth on Si in ultra narrow STI patterned structuresProceedings paper