Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory

Ali, TarekTarekAliMertens, KonstantinKonstantinMertensOlivo, RicardoRicardoOlivoRudolph, MatthiasMatthiasRudolphOehler, SebastianSebastianOehlerKuhnel, KatiKatiKuhnelLehninger, DavidDavidLehningerMuller, FranzFranzMullerHoffmann, RaikRaikHoffmannSchramm, PhilippPhilippSchrammBiedermann, KatiKatiBiedermannMetzger, JoachimJoachimMetzgerBinder, RobertRobertBinderCzernohorsky, MalteMalteCzernohorskyKampfe, ThomasThomasKampfeMuller, JohannesJohannesMullerSeidel, KonradKonradSeidelVan Houdt, JanJanVan HoudtEng, Lukas M.Lukas M.Eng2023-08-072023-06-202023-08-0720210018-9383WOS:000633331000108https://imec-publications.be/handle/20.500.12860/42014Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap MemoryJournal article10.1109/TED.2021.3049758WOS:000633331000108TEMPERATURE-DEPENDENT OPERATIONNONVOLATILE MEMORYFLASHFEFET