A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Marcon, DenisDenisMarconKauerauf, ThomasThomasKaueraufMedjdoub, FaridFaridMedjdoubDas, JoJoDasVan Hove, MarleenMarleenVan HoveSrivastava, PuneetPuneetSrivastavaCheng, KaiKaiChengLeys, MaartenMaartenLeysMertens, RobertRobertMertensDecoutere, StefaanStefaanDecoutereMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoniBorghs, GustaafGustaafBorghs2021-10-182021-10-182010-12https://imec-publications.be/handle/20.500.12860/17571A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTsProceedings paper