85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

Mitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersEneman, GeertGeertEnemanHellings, GeertGeertHellingsPantisano, LuigiLuigiPantisanoHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooEyben, PierrePierreEybenHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/2115685nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport studyProceedings paper