Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially depleted SOI MOSFETs

Lukyanchikova, N.N.LukyanchikovaGarbar, N.N.GarbarSmolanka, A.A.SmolankaSimoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeys2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9232Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially depleted SOI MOSFETsJournal article