High-k/ metal-gate stack work-function tuning by rare-earth capping layers: interface dipole or bulk charge?

Yu, H.YH.YYuChang, S.Z.S.Z.ChangAoulaiche, MarcMarcAoulaicheKaczer, BenBenKaczerAbsil, PhilippePhilippeAbsilAdelmann, ChristophChristophAdelmannHoffmann, Thomas Y.Thomas Y.HoffmannBiesemans, SergeSergeBiesemansWann, CCWannMii, Y.JY.JMii2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16592High-k/ metal-gate stack work-function tuning by rare-earth capping layers: interface dipole or bulk charge?Proceedings paper