On the difference in threshold voltage dependence on channel length for boron and indium channel nMOS transistors

Kubicek, StefanStefanKubicekJeong-Ho, LyuLyuJeong-Hovan Meer, HansHansvan MeerDe Meyer, KristinKristinDe Meyer2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3577On the difference in threshold voltage dependence on channel length for boron and indium channel nMOS transistorsProceedings paper