Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures

D'Hondt, MarkMarkD'HondtMoerman, IngridIngridMoermanDemeester, PietPietDemeester2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1861Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperaturesJournal article