Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI

Put, SofieSofiePutSimoen, EddyEddySimoenAugendre, EmmanuelEmmanuelAugendreClaeys, CorCorClaeysVan Uffelen, MarcoMarcoVan UffelenLeroux, PaulPaulLeroux2021-10-162021-10-162007-01https://imec-publications.be/handle/20.500.12860/12741Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOIProceedings paper