On the impact of indium and boron on the Reversed Narrow-Channel Effects (RNCE) in BULK and SOI MOSFETs

van Meer, HansHansvan MeerLyu, Jeong-hoJeong-hoLyuKubicek, StefanStefanKubicekDe Meyer, KristinKristinDe Meyer2021-10-142021-10-141999https://imec-publications.be/handle/20.500.12860/3938On the impact of indium and boron on the Reversed Narrow-Channel Effects (RNCE) in BULK and SOI MOSFETsProceedings paper