Garbin, DanieleDanieleGarbinRavsher, TarasTarasRavsherDevulder, WouterWouterDevulderClima, SergiuSergiuClimaPotoms, GoedeleGoedelePotomsHody, HubertHubertHodyFranchina Vergel, NathaliNathaliFranchina VergelDegraeve, RobinRobinDegraeveBelmonte, AttilioAttilioBelmonte2026-07-162026-07-1620261862-62541862-6270https://imec-publications.be/handle/20.500.12860/59874Arsenic‐free ovonic threshold switch (OTS) materials are important for enabling sustainable selector devices in high‐density crossbar memory arrays. Guided by ab initio design, we investigate Si‐doped GeS2 as a promising candidate, offering improved thermal stability and reduced leakage compared to alternative arsenic‐free materials. Thin films with up to 10% Si content were deposited by cosputtering and demonstrated thermal stability above 500°C. Device electrical characterization revealed good I OFF performance comparable to reference SiGeAsSe devices. These results position Si‐doped GeS2 as a viable candidate for environmentally friendly, arsenic‐free OTS selectors, with further optimization needed to address endurance limitations.engJournal article10.1002/pssr.202500476WOS:0017513061000091862-6270