Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications

Oh, HyungrockHyungrockOhBelmonte, AttilioAttilioBelmontePerumkunnil, ManuManuPerumkunnilMitard, JeromeJeromeMitardRassoul, NouredineNouredineRassoulDonadio, Gabriele LucaGabriele LucaDonadioDelhougne, RomainRomainDelhougneFurnemont, ArnaudArnaudFurnemontKar, Gouri SankarGouri SankarKarDehaene, WimWimDehaene2023-08-102023-06-202023-08-1020211930-8876WOS:000790809500065https://imec-publications.be/handle/20.500.12860/41845Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applicationsProceedings paper10.1109/ESSDERC53440.2021.9631811978-1-6654-3748-6WOS:000790809500065