S-passivation of the Ge gate stack using (NH4)2S

Sioncke, SonjaSonjaSionckeFleischmann, ClaudiaClaudiaFleischmannLin, DennisDennisLinVrancken, EviEviVranckenCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisTemst, KristiaanKristiaanTemstVantomme, AndreAndreVantommeMuller, MatthiasMatthiasMullerKolbe, MichaelMichaelKolbeBeckhoff, BurkhardBurkhardBeckhoff2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17995S-passivation of the Ge gate stack using (NH4)2SMeeting abstract