Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions

Chowdhury, Mohammad KamruzzamanMohammad KamruzzamanChowdhuryVissouvanadin Soubaretty, BertrandBertrandVissouvanadin SoubarettyBargallo Gonzalez, MireiaMireiaBargallo GonzalezBhouri, NadaNadaBhouriVerheyen, PeterPeterVerheyenHikavyy, AndriyAndriyHikavyyRichard, OlivierOlivierRichardGeypen, JefJefGeypenBender, HugoHugoBenderLoo, RogerRogerLooClaeys, CorCorClaeysSimoen, EddyEddySimoenMachkaoutsan, VladimirVladimirMachkaoutsanTomasini, P.P.TomasiniThomas, S.G.S.G.ThomasLu, J.P.J.P.LuWeijtmans, J.W.J.W.WeijtmansWise, R.R.Wise2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13523Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctionsProceedings paper