AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Cheng, KaiKaiChengLeys, MaartenMaartenLeysDerluyn, JoffJoffDerluynDegroote, StefanStefanDegrooteXiao, DongpingDongpingXiaoLorenz, AnneAnneLorenzBoeykens, StevenStevenBoeykensGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-162021-10-162007-01https://imec-publications.be/handle/20.500.12860/11852AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4Journal article