Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line

De Jaeger, BriceBriceDe JaegerHoussa, MichelMichelHoussaSatta, AlessandraAlessandraSattaKubicek, StefanStefanKubicekVerheyen, PeterPeterVerheyenVan Steenbergen, JanJanVan SteenbergenCroon, JeroenJeroenCroonKaczer, BenBenKaczerVan Elshocht, SvenSvenVan ElshochtDelabie, AnneliesAnneliesDelabieKunnen, EddyEddyKunnenSleeckx, ErikErikSleeckxTeerlinck, IvoIvoTeerlinckLindsay, RichardRichardLindsaySchram, TomTomSchramChiarella, ThomasThomasChiarellaDegraeve, RobinRobinDegraeveConard, ThierryThierryConardPoortmans, JefJefPoortmansWinderickx, GillisGillisWinderickxBoullart, WernerWernerBoullartSchaekers, MarcMarcSchaekersMertens, PaulPaulMertensCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorstVan Moorhem, ElsElsVan MoorhemBiesemans, SergeSergeBiesemansDe Meyer, KristinKristinDe MeyerRagnarsson, Lars-AkeLars-AkeRagnarssonLee, S.S.LeeKota, G.G.KotaRaskin, G.G.RaskinMijlemans, P.P.MijlemansAutran, J.L.J.L.AutranAfanas'ev, V.V.Afanas'evStesmans, A.A.StesmansMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8764Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping lineProceedings paper