Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric

Chien, Yu-ChiehYu-ChiehChienRamírez, Horacio LondoñoHoracio LondoñoRamírezSteudel, SoerenSoerenSteudelRolin, CedricCedricRolinPendurthi, RaviRaviPendurthiGenoe, JanJanGenoeChang, Ting-ChangTing-ChangChangNag, ManojManojNag2021-10-282021-10-2820200741-3106https://imec-publications.be/handle/20.500.12860/34895Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate DielectricJournal articlehttps://doi.org/10.1109/LED.2020.2976616