A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack

Torregiani, CristinaCristinaTorregianiLiu, JoyJoyLiuVandevelde, BartBartVandeveldeDegryse, DominiekDominiekDegryseVan Dal, MarkMarkVan DalBenedetti, AlessandroAlessandroBenedettiLauwers, AnneAnneLauwersMaex, KarenKarenMaex2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9688A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stackProceedings paper