Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Lin, ZaoyangZaoyangLinWu, XiangyuXiangyuWuCott, DaireDaireCottShi, YuanyuanYuanyuanShiMedina Silva, HenryHenryMedina SilvaSergeant, StefanieStefanieSergeantConard, ThierryThierryConardMeersschaut, JohanJohanMeersschautNalin Mehta, AnkitAnkitNalin MehtaGroven, BenjaminBenjaminGrovenMorin, PierrePierreMorinAsselberghs, IngeIngeAsselberghsLockhart de la Rosa, Cesar JavierCesar JavierLockhart de la RosaKar, Gouri SankarGouri SankarKarLin, DennisDennisLinDelabie, AnneliesAnneliesDelabie2024-08-222024-06-132024-08-2220242637-6113WOS:001231818300001https://imec-publications.be/handle/20.500.12860/44022Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal DichalcogenidesJournal article10.1021/acsaelm.4c00309WOS:001231818300001BAND ALIGNMENTMOS2DEPOSITIONMONOLAYERFUNCTIONALIZATIONDIELECTRICSGROWTHOXIDESCMOSHFO2