Pourghaderi, Mohammad AliMohammad AliPourghaderiMagnus, WimWimMagnusSoree, BartBartSoreeMeuris, MarcMarcMeurisDe Meyer, KristinKristinDe MeyerHeyns, MarcMarcHeyns2021-10-182021-10-1820090021-8979https://imec-publications.be/handle/20.500.12860/16049Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topologyJournal article