High quality GdSi1.7 layers formed by high dose channeled implantation

Wu, Ming FangMing FangWuVantomme, AndreAndreVantommePattyn, HugoHugoPattynLangouche, G.G.LangoucheBender, HugoHugoBender2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1670High quality GdSi1.7 layers formed by high dose channeled implantationProceedings paper