Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells

Ali, T.T.AliKuehnel, K.K.KuehnelCzernohorsky, M.M.CzernohorskyRudolph, M.M.RudolphPaetzold, B.B.PaetzoldOlivo, R.R.OlivoLehninger, D.D.LehningerMertens, K.K.MertensMueller, F.F.MuellerLederer, M.M.LedererHoffmann, R.R.HoffmannMart, C.C.MartKalkani, M. N.M. N.KalkaniSteinke, P.P.SteinkeKaempfe, T.T.KaempfeMueller, J.J.MuellerSeidel, K.K.SeidelEng, L. M.L. M.EngVan Houdt, JanJanVan Houdt2021-12-022021-11-022021-12-0220201541-7026WOS:000612717200040https://imec-publications.be/handle/20.500.12860/37616Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory CellsProceedings paper978-1-7281-3199-3WOS:000612717200040