Germanium surface segregation in the silicon passivation of Ge pMOSFETs: influence of the Si precursor

Caymax, MattyMattyCaymaxVincent, BenjaminBenjaminVincentVandervorst, WilfriedWilfriedVandervorstLoo, RogerRogerLoo2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16836Germanium surface segregation in the silicon passivation of Ge pMOSFETs: influence of the Si precursorMeeting abstract