Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

Cao, JingchenJingchenCaoWynocker, IsabellaIsabellaWynockerZhang, En XiaEn XiaZhangReed, Robert A.Robert A.ReedAlles, Michael L.Michael L.AllesSchrimpf, Ronald D.Ronald D.SchrimpfFleetwood, Daniel M.Daniel M.FleetwoodArreghini, AntonioAntonioArreghiniRosmeulen, MaartenMaartenRosmeulenBastos, JoaoJoaoBastosVan den Bosch, GeertGeertVan den BoschLinten, DimitriDimitriLinten2023-08-012023-05-272023-06-272023-08-012023-04-180018-9499WOS:000975399300046https://imec-publications.be/handle/20.500.12860/41652Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling OxideJournal article10.1109/TNS.2022.3227941WOS:000975399300046BORDER TRAPSINSTABILITIESINTERFACEMODEL