Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Grasser, T.T.GrasserStampfer, B.B.StampferWaltl, M.M.WaltlRzepa, G.G.RzepaRupp, K.K.RuppSchanovsky, F.F.SchanovskyPobegen, G.G.PobegenPuschkarsky, K.K.PuschkarskyReisinger, H.H.ReisingerO'Sullivan, BarryBarryO'SullivanKaczer, BenBenKaczer2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30800Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistorsProceedings paperhttps://ieeexplore.ieee.org/document/8353540