Vellianitis, GeorgiosGeorgiosVellianitisVan Dal, MarkMarkVan DalBoccardi, GuillaumeGuillaumeBoccardiDuriez, BlandineBlandineDuriezVoogt, FransFransVoogtKaiser, MonjaMonjaKaiserWitters, LiesbethLiesbethWittersLander, RobRobLander2021-10-182021-10-1820090018-9383https://imec-publications.be/handle/20.500.12860/16451The influence of TiN thickness and SiO2 formation method on the structural and electrical properties of TiN/HfO2/SiO2 gate stacksJournal article