Buhler, R.T.R.T.BuhlerAgopian, P.D.G.P.D.G.AgopianGiacomini, R.R.GiacominiSimoen, EddyEddySimoenClaeys, CorCorClaeysMartino, J.A.J.A.Martino2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18628Uniaxial stress efficiency for different fin dimensions of triple-gate SOI MOSFETsProceedings paper