Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by electron beam induced current

Grazzi, C.C.GrazziAlbrecht, M.M.AlbrechtStrunk, H. P.H. P.StrunkBougrioua, ZahiaZahiaBougriouaMoerman, IngridIngridMoerman2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5320Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by electron beam induced currentProceedings paper