Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions

Dixit, AbhisekAbhisekDixitRooyackers, RitaRitaRooyackersLeys, FrederikFrederikLeysKaiser, MonjaMonjaKaiserWeemaes, R.R.WeemaesFerain, IsabelleIsabelleFerainDe Keersgieter, AnAnDe KeersgieterCollaert, NadineNadineCollaertSurdeanu, RaduRaduSurdeanuGoodwin, MichaelMichaelGoodwinZimmerman, PaulPaulZimmermanLoo, RogerRogerLooCaymax, MattyMattyCaymaxJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemansDe Meyer, KristinKristinDe MeyerKottantharayil, Anil2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10397Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regionsProceedings paper