Ge FETs gate stack passivation options and their scalability to low EOT

Bellenger, FlorenceFlorenceBellengerDe Jaeger, BriceBriceDe JaegerNyns, LauraLauraNynsZahid, MohammedMohammedZahidHoussa, MichelMichelHoussaVrancken, EviEviVranckenTseng, JoshuaJoshuaTsengCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisDe Meyer, KristinKristinDe MeyerHeyns, MarcMarcHeynsHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16728Ge FETs gate stack passivation options and their scalability to low EOTProceedings paper