High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric

Mitard, JeromeJeromeMitardDe Jaeger, BriceBriceDe JaegerEneman, GeertGeertEnemanDobbie, AndrewAndrewDobbieMyronov, M.M.MyronovKobayashi, MasaharuMasaharuKobayashiGeypen, JefJefGeypenBender, HugoHugoBenderVincent, BenjaminBenjaminVincentKrom, RaymondRaymondKromFranco, JacopoJacopoFrancoWinderickx, GillisGillisWinderickxVrancken, EviEviVranckenVanherle, WendyWendyVanherleWang, Wei-EWei-EWangTseng, JoshuaJoshuaTsengLoo, RogerRogerLooDe Meyer, KristinKristinDe MeyerCaymax, MattyMattyCaymaxPantisano, LuigiLuigiPantisanoLeadley, D.RD.RLeadleyMeuris, MarcMarcMeurisAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-192021-10-1920110021-4922https://imec-publications.be/handle/20.500.12860/19438High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectricJournal article