Zhao, Simeng E.Simeng E.ZhaoBonaldo, StefanoStefanoBonaldoWang, PengfeiPengfeiWangZhang, En XiaEn XiaZhangWaldron, NiamhNiamhWaldronCollaert, NadineNadineCollaertPutcha, VamsiVamsiPutchaLinten, DimitriDimitriLintenGerardin, SimoneSimoneGerardinPaccagnella, AlessandroAlessandroPaccagnellaSchrimpf, Ronald D.Ronald D.SchrimpfReed, Robert A.Robert A.ReedFleetwood, Daniel M.Daniel M.Fleetwood2021-10-282021-10-282019https://imec-publications.be/handle/20.500.12860/34546Total-ionizing-dose effects on InGaAs FinFETs with improved gate stackProceedings paper