Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior

He, LiangLiangHeZhao, PanPanZhaoLiu, JiahaoJiahaoLiuSu, YahuiYahuiSuChen, HuaHuaChenJia, XiaofeiXiaofeiJiaArimura, HiroakiHiroakiArimuraMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertClaeys, CorCorClaeysSimoen, EddyEddySimoen2021-10-272021-10-272019-120018-9383https://imec-publications.be/handle/20.500.12860/33114Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behaviorJournal articlehttps://ieeexplore.ieee.org/document/8570775