Bias stress in pentacene transistors measured by four probe transistor structures

Genoe, JanJanGenoeSteudel, SoerenSoerenSteudelDe Vusser, StijnStijnDe VusserVerlaak, StijnStijnVerlaakJanssen, DimitriDimitriJanssenHeremans, PaulPaulHeremans2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8948Bias stress in pentacene transistors measured by four probe transistor structuresProceedings paper