High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation

Germain, MarianneMarianneGermainDerluyn, JoffJoffDerluynXiao, DongpingDongpingXiaoVandersmissen, RafRafVandersmissenDas, JohanJohanDasWang, WenfeiWenfeiWangBoeykens, StevenStevenBoeykensLeys, MaartenMaartenLeysDegroote, StefanStefanDegrooteRuythooren, WouterWouterRuythoorenBorghs, GustaafGustaafBorghs2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8950High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivationOral presentation