Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond

Ragnarsson, Lars-AkeLars-AkeRagnarssonChew, Soon AikSoon AikChewDekkers, HaroldHaroldDekkersToledano Luque, MariaMariaToledano LuqueParvais, BertrandBertrandParvaisDe Keersgieter, AnAnDe KeersgieterVan Ammel, AnnemieAnnemieVan AmmelSchram, TomTomSchramYoshida, NaomiNaomiYoshidaPhatak, AnupAnupPhatakHan, KepingKepingHanColombeau, BenjaminBenjaminColombeauBrand, AdamAdamBrandHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24415Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyondProceedings paper